This is a 15-minute delayed claim to ensure its accuracy and reliability, and it is not responsible for any loss or damage caused by any delay or omission (regardless of whether tort liability or liability under the law or liability for breach of contract) or other liabilities)
Substrate Material | Cast-mono crystalline silicon |
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Size | 158.75mm×158.75mm±0.25mm |
Thickness | 150μm±20μm |
Rear Side Electrode (+) | 9 Busbars/0.1mm width |
Front Side Electrode (-) | 9 Busbars/0.1mm width |
Maximum Efficiency | >24% |
Operating Temperature Range | -40℃ ~ +85℃ |
Temperature characteristics | |
Temp. coefficient of Isc | +0.038%/K |
Temp. coefficient of Voc | -0.238%/K |
Temp. coefficient of Pmax | -0.268%/K |